Don Monroe

Experience

Following a doctorate in condensed-matter physics from MIT, became a member of technical staff at Bell Labs. After first exploring low temperature phenomena in GaAs heterostructures, evolved toward device physics, processing and design of modern technologies, including fiber devices, silicon MOSFETs and InGaAsP optolectronic devices:

§   1978          Designed tunable microwave filter using YIG.

§   1980-1985 Experimentally characterized optically-induced transients in Chalcogenide glasses.

§   1984-1985 Developed theoretical picture of hopping transients, introducing “transport energy.”

§   1985-1987 Devised unique screening experiment to demonstrate electron glass in impurity bands at low temperatures.

§   1987-1989 Demonstrated thermal nature of optically induced electrical response in high-Tc superconductors.

§   1988          Devised electron beam-induced voltage experiment for characterizing junctions in high-Tc films.

§   1990          Theoretically described ordering phenomena and mobility in impurity bands and DX centers.

§   1991-1994 Performed mobility, Shubnikov-de Haas, quantum Hall measurements of 2D SiGe heterostructures.

§   1992-1993 Theoretically analyzed scattering mechanisms for SiGe heterostructures.

§   1993          Introduced a phenomenological model for reliability of UV-written Bragg gratings in fibers.

§   1993-1994 Led team exploring fabrication of MOSFETs using strained Si on graded SiGe.

§   1994-1995 Examined in device and circuit simulation the low-power capability of ultra-thin oxides.

§   1995-2002 Contributed physical insight and measurements to understanding of thin gate oxide reliability.

§   1993-2001 Electrically characterized mobility and capacitance of thin oxides.

§   1998-2000 Coordinated Si wafer processing in Orlando development fab and Murray Hill research fab.

§   1995-2002 Designed and tested electrical test structures for CMOS wafers.

§   1999-2001 Co-developed, coordinated, and characterized novel planar CMOS process sequences.

§   1997-2000 Helped re-introduce and evaluate Silicon-on-Insulator (SOI) MOSFETs in Murray Hill and Orlando

§   1997-2000 Framed the circuit issues surrounding SOI for possible adoption by Lucent Microelectronics

§   1997-2001 Co-invented the Vertical-Replacement Gate (VRG) MOSFET process.

§   1994-2000 Developed analytical model for short-channel effects in MOSFETs

§   1999-2000 Developed process flow, design rules and circuit layouts for side-by-side VRG CMOS.

§   2001          Designed waveguide and layer structure for integrated photodetector and Semiconductor Optical                                                         Amplifier for 40Gb/s operation in InGaAsP

§   2002          Served on Committee (with Mac Beasley, Herwig Kogelnik, Herb Kroemer, and Supriyo Datta) investigating scientific misconduct in the work of Hendrik Schön.

§   2002-         Developed strategy for circuit-specific leveraging of reliability expertise in a foundry era.

§   2003-         Chaired committee to implement and document design rules issues across Agere

 

Ø      Experience with a broad spectrum of materials, devices and processing, complemented and enhanced by a thorough understanding of their application in circuits and systems.

Ø      Comfortable coexistence of experiment and theory, and of science and engineering.

Ø      Keen appreciation of, and respect for, the engineering constraints required for real-world application.

Ø      Clear understanding of the physical principles underlying devices and their applications

Ø       Excellent communicator of these physical principles and of the connection between materials and device properties, and circuit and system performance.

 


Research Highlights

·         Carrier dynamics in amorphous semiconductors. Thesis experiments in the transport and optical probing of photoexcited carriers. The most influential result of this work (still 13 citations in 1998) was summarized in “Hopping in exponential band tails” (D. Monroe, Physical Review Letters 54, 146 (1985)). In this work, Mott’s central concept of the mobility edge governing carriers in amorphous semiconductors was broadened and replaced with a temperature-dependent “transport energy.”

·         Correlation Effects for Localized Carriers. Devised a unique experiment to search for a low-temperature phase transistion among carriers in GaAs impurity bands, resulting in “Long-lived Coulomb gap in a compensated semiconductor-the electron glass” (D.  Monroe, A.C. Gossard, J.H. English, B. Golding, W.H. Haemmerle, M.A. Kastner, Physical Review Letters 59, 1148 (1987)). The effects of inter-site correlations can be important at higher temperatures as well, as shown in “Intersite Coulomb repulsion and intrasite attraction for DX centers in GaAs” (D. Monroe, Applied Physics Letters 59, 2293 (1991)).

·         Response of High-Tc superconductors to illumination. The possible use of high-Tc superconductor films in optical detection was shown to be a rather uninteresting thermal effect in “Electrical response of superconducting YBa2Cu3O7-d to light” (W.S. Brocklesby, D. Monroe, A.F.J. Levi, M. Hong, S.H. Liou, J. Kwo, C.E. Rice, Applied Physics Letters 54, 1175 (1989)). This thermal effect was successfully exploited to image weak links in an electron microscope technique (independently invented in Germany) in  “Scanning electron microscope identification of weak links in superconducting thin films,” (D. Monroe, W.S. Brocklesby, R.C. Farrow, M. Hong, S.H. Liou, Applied Physics Letters 53, 1210 (1988)).

·         Stability of UV-written Bragg Gratings in Fibers. The fading of periodic modulation of the index of refraction in fibers is of significant technological importance. The paper “Decay of ultraviolet-induced fiber Bragg gratings” (T. Erdogan, V. Mizrahi, P.J. Lemaire, D.  Monroe, Journal of Applied Physics 76, 73 (1994)) shows that the dynamics can be modeled and modified using the framework developed for carriers in amorphous semiconductors.

·         Transport in SiGe Heterostructures. The development of high-quality graded SiGe buffers opened a new era in Si-based heterostructures; the experimental and theoretical underpinnings for the record-high mobilities were summarized in “Comparison of mobility-limiting mechanisms in high-mobility Si1-xGex heterostructures,” (D. Monroe, Y.-H. Xie, E.A. Fitzgerald, P.J. Silverman, G.P. Watson, Journal of Vacuum Science & Technology B 11, 1731 (1993)).

·         Breakdown in Thin Gate Oxides Work on the reliability and breakdown mechanisms for oxides only a few nm thick, helping to pose such challenging questions as “Ultra-thin gate dielectrics: they break down, but do they fail?” (B.E. Weir, P.J. Silverman, D. Monroe, K.S. Krisch, M.A. Alam, G.B. Alers, T.W. Sorsch, G.L. Timp, F. Baumann, C.-T. Liu, Y. Ma, D. Hwang, International Electron Devices Meeting Technical Digest, 73 (1997)). The answer to this question appears to be largely negative because a single soft breakdown is not fatal. This has given oxide scaling a new lease on life.

§         Short–Channel Effects in MOSFETs. The continued scaling of MOSFETs to shorter gate lengths is limited by various “short-channel effects.” Surprisingly, existing simple models of these effects get important aspects of the physics wrong. Qualitatively different predictions for the scalability are presented in “Evanescent-Mode Analysis of Short-Channel Effects in Fully-Depleted SOI and Related MOSFETs,” 1998 Silicon-on-Insulator Conference.

§         Vertical Replacement-Gate Transistor. Together with Jack Hergenrother, invented and realized a new transistor process with a gate length independent of lithography and etch, but retaining many of the important features of high-performance MOSFETs. This device has the potential to change the way Si CMOS is done in the future. (Jack Hergenrother et al., 1999 IEEE International Electron Device Meeting.

§         Pre-amplified Detector. Designed an optimized InGaAsP layer structure for a Semiconductor Optical Amplifier with low polarization-dependent gain over the entire “C-band” wavelength range. Design was integrated with a co-grown PIN photodetector to form a pre-amplified detector with a sensitivity 8 dB better than a conventional design and less than 1dB polarization dependence. (B. Mason et al. Post Deadline Paper at 2002 Optical Fiber Conference)


Selected Skills


Device Physics

·   Ultra-short MOSFETs

·   SOI devices

·   Vertical Transistors

·   HEMTs

·   Bragg gratings in Fibers

·   InP devices


Materials Systems

·   Si CMOS processing

·   Strained SiGe

·   Metal Silicides

·   Chalcogenide glasses

·   SiO2 (CMOS and fibers)

·   GaAs/GaAlAs

·   InP/InGaAsP/InAlAsP


Technologies

·   Ultra-large scale CMOS

·   Analog design from ULSI CMOS

·   DWDM optical communication

·   Microwave filters

·   Microwave waveguides


 
Materials phenomena

·   Carrier scattering and transport

·   Velocity saturation and overshoot

·   Static screening

·   Gate oxide reliability

·   Electronic tunneling

·   DX centers

·   Dislocation dynamics

·   Strain effects on band structure

·   Photoconductivity

·   Charge ordering

·   Optical effects and weak links in superconductors


 
Simulation and programming Tools

·   PADRE device simulator

·   ADVICE/ SPICE/ celerity circuit simulation

·   GRED layout tools

·   L-Edit

·   FIMMWAVE

·   Matlab

·   Html, FrontPage, and website design


 

Infrastructure and Experiments

·   Low temperature (He3) measurements

·   High Magnetic Fields

·   Dye Laser, YAG lasers

·   Optical measurements

·   Fiber optics

·   Electrical Device characterization-IV, CV, S-parameter

·   Design rules

·   Device models

·   Yield modeling

 



Employment History

2001-present                                         Agere Systems                        Berkeley Heights, NJ

                                                                Distinguished Member of Technical Staff

                                                                2002 – present      Integrated Circuit Technology Department

2001 – 2002            High Performance Structures and Device Research Department

1984 - 2001                                             Bell Labs                                             Murray Hill, NJ

Member of Technical Staff

1995 – 2001            ULSI Technology Research Department

1993 – 1995            Silicon Materials Research Department

1990 – 1993            Physical Chemistry Research Department

1984 – 1990            Condensed Matter Physics Research Department

February-December, 1978                   Raytheon Research Division         Waltham, MA

Education

1980 - 1985                                             Massachusetts Institute of Technology                             Cambridge, MA

Ph.D., Physics

Thesis Topic: “Transient Transport and Optical Studies of Chalcogenide Glasses”

Thesis Advisor: Marc Kastner

1976 – 1978, 1979-1980                        Massachusetts Institute of Technology                             Cambridge, MA

B.S., Physics

Professional Memberships

Fellow, American Physical Society

Senior Member, Institute of Electrical and Electronic Engineers

Member, Materials Research Society

Member, Optical Society of America

Member, American Association for the Advancement of Science

Member, American Association of Physics Teachers

 

Personal Information

Ø       Married to Alice White (Director at Bell Labs, Lucent)

Ø       Two daughters, ages eight and ten.

Ø       Play rock and roll guitar, bass, vocals.

Recent Invited Talks

·         “The Schön Affair: Investigating Scientific Misconduct,” Don Monroe, Middlebury College, November 2002.

·         “Sub-50 nm Local Channel MOSFETs by SALVO Process,” C.P. Chang, S.N. Rogers, H.-H. Vuong, M.R. Baker, C.S. Pai, F.P. Klemens, W.W. Tai, M. Bude, J.F. Miner, E.J. Lloyd, M. Frei, D.P. Monroe, W.M. Mansfield, T.W. Sorsch, A. Kornblit, J. T.-C. Lee, and C.S. Rafferty, Solid-State Devices Meeting 2001

·         “Modeling Short-Channel Effects in SOI MOSFETs,” Don Monroe, Sang-Hyun Oh, and Jack Hergenrother, Tenth International Symposium on Silicon-on-Insulator Technology and Devices, Electrochemical Society Meeting, Washington, DC, March 2001.

·         “The Vertical-Replacement Gate (VRG) MOSFET: A High-Performance Vertical MOSFET with Lithography-Independent Critical Dimensions,” J.M. Hergenrother, S.-H. Oh, T. Nigam, D. Monroe, F.P. Klemens, A. Kornblit, F.H. Baumann, J.L. Grazul, R.W. Johnson, C.A. King, and R.N. Kleiman, Electrochemical Society Meeting, Washington, DC, March 2001.

·         “The Vertical-Replacement Gate MOSFET”, Don Monroe, Jack Hergenrother, Sang-Hyun Oh, and Tanya Nigam, Laboratory for Physical Sciences, College Park, MD November 15, 2000.

·         “The Vertical-Replacement Gate MOSFET”, Don Monroe, MIT Microsystems Technology Laboratory Seminar, May 2, 2000.

·         “Challenges of Gate Dielectric Scaling, Including the Vertical Replacement Gate MOSFET,” Don Monroe, Jack Hergenrother, and Rafi Kleiman, 2000 International Conference on Characterization and Metrology for ULSI Technology, National Institute of Standards and Technology, Gaithersburg, MD, June 26, 2000.

·         “Challenges in Gate Oxide Scaling,” American Vacuum Society Annual Meeting, Seattle, Wash., October 1999.

·         “Silicon Roadmap: Speed Limits, Roadblocks, and On-Ramps,” Workshop on Future Trends in Microelectronics- Beyond the Beaten Path, Les Embiez, France, June, 1998.

·         SRC Topical Conference on Ultrathin Dielectrics,  "Tunneling through, and transport near, ultra-thin oxides and oxynitrides," Raleigh, NC, March 21, 1996

·         Materials Research Society Spring Meeting,  “Transport in Strained Ge and Strained Si,” D.P. Monroe, Y.-H. Xie, P.J. Silverman, E.A. Fitzgerald, April 1995.

·         Symposium on Interfaces and Transport, University of Minnesota, Minneapolis, “Mobility Limits in Strained Si and Ge: Dislocation Scattering and Interface Roughening,” D.P. Monroe, May 5, 1995.

·         American Physical Society March Meeting, Pittsburgh, “High-Mobility Hole Transport in Modulation-Doped Ge on Si,” D.P. Monroe, March 1994.

·         “The electron glass,” D. Monroe, International Conference on Hopping and Related Phenomena, Raleigh, North Carolina, 1989

Other Professional Activities

·       Program Committee, Silicon Nanoelectronics Workshop, 2002

·       Starting Materials sub-sub-Technical Working Group, International Technology Roadmap for Semiconductors, 2000-2001

·       Technical Program Committee, Subcommittee for CMOS Devices, International Electron Device Meeting 2000

·       Technical Program Committee, International Symposium on Low-Power Electronics and Devices, 1996-1998

·       Technical Program Committee, Electronic Materials, Processing and Devices Session, 1997 American Vacuum Society National Symposium. 1997-1998

·       Organizer for Evening Panel Session on MOSFET Scaling, 2000 VLSI Technology Conference

·       Editorial Board, Journal of Vacuum Science and Technology

·       Editorial Board, IEEE Online Journal on Transactions on Device and Materials Reliability


Patents Awarded

·         6,518,622 H. Chew et al., “Vertical Replacement Gate (VRG) MOSFET With A Conductive Layer Adjacent A Source/Drain Region And Method Of Manufacture Therefore”

·         J. M. Hergenrother and D. P. Monroe “A CMOS Integrated Circuit having Vertical Transistors and a Process for Fabricating Same”

·         6,197,641: J. M. Hergenrother and D. P. Monroe, “Process for Fabricating Vertical Transistors”

·         6,027,975: J. M. Hergenrother and D. P. Monroe, “Process for Fabricating Vertical Transistors”

·         5,442,205: Brasen et al., “Semiconductor Heterostructure Devices with Strained Semiconductor Layers”

·         5,620,496 Erdogan et al., “Method for Making Stable Optical Devices Employing Radiation-Induced Index Changes”

Other Awards

Bell Lab President’s Gold Award Winner 2000- Wavestar LambdaRouter Team

Publications

1.        “Report of the Investigation Committee on the Possibility of Scientific Misconduct in the Work of Hendrik Schön and Coauthors,” M. Beasley, S. Datta, H. Kogelnik, H. Kroemer, and D. Monroe, available at http://www.lucent.com/news_events/researchreview.html (2002).

2.        “Photonic Integrated Receiver For 40Gbit/s Transmission,” Beck Mason, S. Chandrasekhar, Abdallah Ougazzaden, Chuck Lentz, J. Michael Geary, L.L. Buhl, Larry Peticolas, Ken Glogovsky, Joseph M. Freund, Lew Reynolds, George Przybylek, Frank Walters, Andrei Sirenko, John Boardman, Terry Kercher, Mike Rader, Judy Grenko, Don Monroe and Len Ketelsen, accepted for Electronics Letters.

3.        “40Gb/s photonic integrated receiver with –17dBm sensitivity,” Beck Mason, J. Michael Geary, Joseph M. Freund, Abdallah Ougazzaden, Chuck Lentz, Ken Glogovsky, George Przybylek, Larry Peticolas, Frank Walters, Lew Reynolds, John Boardman, Terry Kercher, Mike Rader, Don Monroe, Len Ketelsen, S. Chandrasekhar, L. L. Buhl, Post-Deadline paper, 2002 Optical Fiber Conference.

4.        “The vertical replacement-gate (VRG) MOSFET,” J.M Hergenrother, S.-H. Oh, T. Nigam, D. Monroe, F.P. Klemens, and A. Kornblit, Solid State Electronics 46, 939 (2002).

5.        “The Ultrathin-Body Vertical Replacement-Gate MOSFET: A Highly-Scalable, Fully-Depleted MOSFET with a Deposition-Defined Ultrathin (< 15 nm) Silicon Body,” P. Kalavade, J.M. Hergenrother, T.W. Sorsch, S. Aravamudhan, M.K. Bude, E.J. Ferry, F.P. Klemens, A. Kornblit, W.M. Mansfield, J.F. Miner, D. Monroe, G.D. Wilk, P.M. Voyles, J.L Grazul, K. Saraswat, proceedings of Silicon Nanoelectronics Workshop, 2002.

6.         “Improved Film Growth and Flatband Voltage Control of ALD HfO2 and Hf-Al-O with n+ poly-Si Gates using Chemical Oxides and Optimized Post-Annealing,” G.D. Wilk, M.L. Green, M.-Y. Ho, B.W. Busch, T.W. Sorsch, F.P. Klemens, B. Brijs, R.B. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J.M. Hergenrother, to be published in the Proceedings of the VLSI Technology Symposium, 2002.

7.        “50 nm Vertical Replacement-Gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 Gate Dielectrics,” J.M. Hergenrother, G.D. Wilk, T. Nigam, F.P. Klemens, D. Monroe, P.J. Silverman, T.W. Sorsch, B. Busch, M.L. Green, M.R. Baker, T. Boone, M.K. Bude, N.A. Ciampa, E.J. Ferry, A.T. Fiory, S.J. Hillenius, D.C. Jacobson, R.W. Johnson, P. Kalavade, R.C. Keller, C.A. King, A. Kornblit, H.W. Krautter, J.T-C. Lee, W.M. Mansfield, J.F. Miner, M.D. Morris, S.-H. Oh, J.M. Rosamilia, B.J. Sapjeta, K. Short, K. Steiner,  D.A. Muller, P.M. Voyles, J.L. Grazul, E.J. Shero, M.E. Givens, C. Pomarede, M. Mazanec, C. Werkhoven, Proceedings of the International Electron Device Meeting, 65 (2001).

8.        “Sub-50 nm Local Channel MOSFETs by SALVO Process,” C.P. Chang, S.N. Rogers, H.-H. Vuong, M.R. Baker, C.S. Pai, F.P. Klemens, W.W. Tai, M. Bude, J.F. Miner, E.J. Lloyd, M. Frei, D.P. Monroe, W.M. Mansfield, T.W. Sorsch, A. Kornblit, J. T.-C. Lee, and C.S. Rafferty, Proceedings, Solid State Devices Meeting 2001

9.        “Physical and Electrical Properties of Ultrathin (£ 2.0 nm) Rapid Thermal Silicon Oxynitrides,” M.L. Green, T.W. Sorsch, W. Gladden, Y. Ma, W.N. Lennard, B.E. Weir, D. Monroe, and P. Silverman,” proceedings of the 2001 Electrochemical Society Meeting.

10.     “50 nm Vertical Replacement-Gate (VRG) pMOSFETs,” Sang-Hyun Oh, J.M. Hergenrother, T. Nigam, D. Monroe, F.P. Klemens, A. Kornblit, W.M. Mansfield, M.R. Baker, D.L. Barr, F.H. Baumann, K.J. Bolan, T. Boone, N.A. Ciampa, R.A. Cirelli, D.J. Eaglesham, E.J. Ferry, A.T. Fiory, J. Frackoviak, J.P. Garno, H.J. Gossmann, J.L. Grazul, M.L. Green, S.J. Hillenius, R.W. Johnson, R.C. Keller, C.A. King, R.N. Kleiman, J.T.-C. Lee, J.F. Miner, M.D. Morris, C.S. Rafferty, J.M. Rosamilia, K. Short, T.W. Sorsch, A.G. Timko, G.R. Weber, G.D. Wilk, and J.D. Plummer, Proceedings of the International Electron Device Meeting, 65 (2000).

11.     “Challenges of Gate Dielectric Scaling, Including the Vertical Replacement Gate MOSFET,” Don Monroe, Jack Hergenrother, and Rafi Kleiman, in Characterization and Metrology for ULSI Technology, D.G. Seiler, A.C. Diebold, T.J. Shaffner, R.McDonald, W.M. Bullis, P.J. Smith, and E.M. Secula, eds. (American Institute of Physics conference proceedings 550, Melville, New York, 2001).

12.     "Analytic Description of Short-Channel Effects in Fully-Depleted Double-Gate and Cylindrical, Surrounding-Gate MOSFETs," Sang-Hyun Oh, Don Monroe, and J.M. Hergenrother, Electron Device Letters, 21, 445 (2000).

13.     “The Vertical Replacement-Gate (VRG) MOSFET: A High-Performance Vertical MOSFET with Lithography-Independent Critical Dimensions,” Jack Hergenrother and Don Monroe, Technical Digest of the Solid State Devices and Materials Conference, 220 (2000).

14.     “The Vertical Replacement-Gate (VRG) MOSFET: A 50-nm Vertical MOSFET with Lithography-Independent Critical Dimensions,” Jack Hergenrother and Don Monroe, Technical Digest of the Electron, Ion, and Photon Beam Technology and Nanofabrication Conference, 331 (2000).

15.     “Gate oxide reliability projection to the sub-2 nm regime,” Weir, B.E., Alam, M.A., Bude, J.D., Silverman, P.J., Ghetti, A., Baumann, F., Diodato, P., Monroe, D., Sorsch, T., Timp, G.L., Ma, Y., Brown, M.M., Hamad, A., Hwang, D., Mason, P., Semiconductor Sci. Tech. 15, 455 (2000).

16.     “The Application of Solid Source Diffusion in the Vertical Replacement-Gate (VRG) MOSFET,” Sang-Hyun Oh, J.M. Hergenrother, Don Monroe, T. Nigam, F.P. Klemens, A. Kornblit, G.R. Weber, W.M. Mansfield, F.H. Baumann, C.A. King, R.N. Kleiman, H-H. Vuong, H.J. Gossmann, and C.S. Rafferty, Symposium Proceedings, Si Front-End Processing, 610, Materials Research Society, April 2000.

17.     The Vertical, Replacement-Gate (VRG) Process for Scalable, General-Purpose Complementary Logic," Don Monroe and Jack Hergenrother, Proceedings of the International Solid-State Circuits Conference, 134 (2000).

18.     “Stress Induced Leakage Current Analysis via Quantum Yield Experiment,” Ghetti, A; Alam, M; Bude, J; Monroe, D; Sangiorgi, E; Vaidya, H., IEEE Trans. Electron Devices 47, 1341 (2000).

19.     “Stress Induced Leakage Current Analysis via Quantum Yield Experiment,” Ghetti, A; Alam, M; Bude, J; Monroe, D; Sangiorgi, E; Vaidya, H., Moccio, S. Proceedings of the International Electron Device Meeting, 75 (1999).

20.     “An Anode Hole Injection Percolation Model for Oxide Breakdown – The ‘Doom's Day’ Scenario Revisited” M. A. Alam, J. Bude, B. Weir, P. Silverman, A. Ghetti, D. Monroe, K.P. Cheung, and S. Moccio Proceedings of the International Electron Device Meeting, 1999

21.     “Explanation of Soft and Hard Breakdown and its Consequences for Area Scaling,” Muhammad A. Alam, Bonnie Weir, Jeff Bude, P. Silverman and Don Monroe Proceedings of the International Electron Device Meeting, 1999

22.     “Gate Oxides in 50nm Devices: Thickness Uniformity Improves Projected Reliability,” B. E. Weir, P. J. Silverman, M. A. Alam, F. Baumann, D. Monroe, A. Ghetti, J. D. Bude, G. L. Timp, A. Hamad, T. M. Oberdick  , N. X. Zhao, Y. Ma, M. M. Brown, D. Hwang, T. W. Sorsch, J.

23.     “The Vertical Replacement-Gate (VRG) MOSFET: A 50-nm Vertical MOSFET with Lithography-Independent Gate Length,” J.M. Hergenrother, D. Monroe, F.P. Klemens, A. Kornblit, G.R. Weber, W.M. Mansfield, M.R. Baker, F.H. Baumann, K.J. Bolan, J.E. Bower, N.A. Ciampa, R.A. Cirelli, J.I. Colonell, D.J. Eaglesham, J. Frackoviak, H.J. Gossmann, M.L. Green, S.J. Hillenius, C.A. King, R.N. Kleiman, W.Y-C. Lai, J.T-C. Lee, R.C. Liu, H.L. Maynard, M.D. Morris, S-H. Oh , C-S. Pai, C.S. Rafferty, J.M. Rosamilia, T.W. Sorsch, H-H. Vuong Proceedings of the International Electron Device Meeting, 1999.

24.     “Boron pileup and clustering in silicon-on-insulator films,” H.H. Vuong, H.-J. Gossmann, L. Pelaz, G.K. Celler, D.C. Jacobson, D. Barr, J. Hergenrother, D. Monroe, V.C. Venezia, C.S. Rafferty, S.J. Hillenius, J. McKinley, F.A.A. Stevie, C. Granger, Applied Physics Letters 75, 1083 (1999).

25.     “J-Ramp on sub-3nm Dielectrics: Noise as a Breakdown Criterion,” G. Alers, B. Weir, M. Frei, D. Monroe, Proceedings of the 1999 International Reliability Physics Symposium.

26.     “Evanescent-Mode Analysis of Short-Channel Effects in Fully-Depleted SOI and Related MOSFETs,” Don Monroe and Jack Hergenrother, 1998 IEEE International SOI Conference Proceedings,

27.     “The End of Scaling: Disruption from Below,” in Future Trends in Microelectronics-Beyond the Beaten Path, (Wiley, 1999) edited by Serge Luryi, Jimmy Xu, and Alex Zaslavsky.

28.     “Experimental evidence for a two-dimensional quantized Hall insulator,” M. Hilke, D. Shahar, S.H. Song, D.C. Tsui, Y.-H. Xie, and D. Monroe, Nature, 395 (1998) 675.

29.     “Effect of Electronic Corrections on the Thickness Dependence of Thin Oxide Reliability,” G.B. Alers, A.S. Oates, D. Monroe, K.S. Krisch, B.E. Weir, 1997 IEEE International Integrated Reliability Workshop Final Report.

30.     “Symmetry in the insulator-quantum-Hall-insulator transitions observed in a Ge/SiGe quantum well,” M. Hilke, D. Shahar, S.H. Song, D.C. Tsui, Y.-H. Xie, D. Monroe, Physical Review B56 (1997) 15545.

31.     Ultra-thin gate dielectrics: they break down, but do they fail?” B.E. Weir, P.J. Silverman, D. Monroe, K.S. Krisch, M.A. Alam, G.B. Alers, T.W. Sorsch, G.L. Timp, F. Baumann, C.-T. Liu, Y. Ma, D. Hwang, 1997 International Electron Devices Meeting Technical Digest, 73 (1997).

32.     “Effect of electronic corrections on the thickness dependence of thin oxide reliability,” G.B. Alers, A.S. Oates, D. Monroe, K.S. Krisch, B.E. Weir, Applied Physics Letters 71, (1997) 2478.

33.     “Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6/ and Si/Si0.7Ge0.3 quantum wells: evidence for two-dimensional acoustic phonons,” S.H Song, W. Pan, D.C. Tsui, Y.-H. Xie, D. Monroe,  Applied Physics Letters 70 (1997) 3422.

34.      “1/f noise in the tunneling current of thin gate oxides,” G.B. Alers, D. Monroe, K.S. Krisch, B.E. Weir, A.M. Chang, Materials Reliability in Microelectronics VI (Materials Research Society, Pittsburgh, 1996) 311.

35.     “New universality at the magnetic field driven insulator to integer quantum Hall effect transitions,” S.-H. Song, D. Shahar, D.C. Tsui, Y.-H. Xie, D. Monroe, Physical Review Letters 78, 2200 (1997).

36.     “Tunnelling current noise in thin gate oxides,” G.B. Alers, K.S. Krisch, D. Monroe, B.E. Weir, A.M. Chang, Applied Physics Letters  69, 2885 (1996).

37.      “Design Methodology for Low-Power CMOS Technologies,” A. Mujtaba, D.P. Monroe, R.-H. Yan, R. Dutton, Proceedings of the 1995 Symposia on Low-Power Electronics, San Jose, CA 1995.

38.     “Antidot Superlattices in Two-Dimensional Hole Gases Confined in Strained Germanium Layers,” D. Többen, M. Holtzmann, G. Abstreiter, A. Kriele, H. Lorenz, J.P. Kotthaus, F. Schäffler, Y.-H. Xie, P.J. Silverman, D.P. Monroe, Semiconductor Science and Technology 10, 1413 (1995).

39.     “Barrier Height Measurements in O2 and N2O Gate Dielectrics,” B.E. Weir, H. Nussbaumer, K.S. Krisch, D.P. Monroe, M.-T. Tang, K.W. Evans-Lutterodt, M.L. Green, D. Brasen, L. Manchanda, Proceedings Semiconductor Interface Specialists Conference.

40.     “Reducing Operating Voltage for 3, 2 to 1 Volt and Below­-Challenges and Guidelines,” R.-H. Yan, D.P. Monroe, J. Weis, A. Mujtaba, E.H. Westerwick, 1995 International Electron Devices Meeting Technical Digest, 55 (1995).

41.     “A symmetric 0.25mm CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography,” D.M. Boulin, W.M. Mansfield, K.J. O’Connor, J. Bevk, D. Brasen, M. Cheng, R.A. Cirelli, S.A. Eshraghi, M.L. Green, K.V. Guinn, S.J. Hillenius, D.E.  Ibbotson, D.C. Jacobson, Y.O. Kim, C.A. King, R.C. Kistler, F.P. Klemens, K.S. Krisch, A. Kornblit, J.T.C. Lee, L. Manchanda, S.C. McNevin, S.V. Moccio, D.P. Monroe, D.P.; K.K. Ng, M.L. O’Malley, C.S. Rafferty, G.P. Schwartz, S. Vaidya, G.R. Weber, L.C. Feldman, M.R. Pinto, T. Itani, T. Tounai, K. Kasama, H. Miyamoto, E. Ikawa, E.; E. Hasagawa, A. Ishitani, H. Ito, T. Horiuchi, S. Saito, M. Nakamae, 1995 Symposium on VLSI Technology. Digest of Technical Papers, 65 (1995).

42.     “Circuits, Transistors, Processing, and Materials for 0.1-Micron CMOS Technology,” Y.-G Wey, J. Weis, K.F. Lee, D.P. Monroe, F.H. Baumann, E.H. Westerwick, R.H. Yan, Proceedings of International Workshop on Semiconductor Characterization: Present Status and Future Needs (1995).

43.     “From Relaxed GeSi Buffers to FETs: Current Status and Future Prospects,” Y.-H. Xie, E.A. Fitzgerald, D.P. Monroe, G.P. Watson, P.J. Silverman, Japanese Journal of Applied Physics 33, 2372 (1994).

44.     “The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, n-type Si0.7­Ge0.3,” G.P. Watson, D.P. Monroe, J.Y. Cheng, E.A. Fitzgerald, Y.-H. Xie, R.B. van Dover, Silicides, Germanides, and Their Interfaces, Edited by R.W. Fathauer, S. Mantl, L.J. Schowalter, and K.N. Tu (Materials Research Society, Pittsburgh, 1994) 323.

45.     “Thickness dependence of electrical transport in buried CoSi2 films fabricated by ion beam synthesis,” K. Radermacher, R. Jebasinski, S. Mantl, D. Monroe, A.E. White, K.T. Short, Silicides, Germanides, and Their Interfaces, Edited by R.W. Fathauer, S. Mantl, L.J. Schowalter, and K.N. Tu (Materials Research Society, Pittsburgh, 1994) 209.

46.     “Hydrogen-induced-loss increases in erbium-doped amplifier fibers: revised predictions,” P.J. Lemaire, D.P. Monroe, H.A. Watson, 1994 Conference on Optical Fiber Communication (Optical Society of America, Washington, 1994) 301.

47.     “Decay of UV-induced fiber Bragg gratings,” T. Erdogan, V. Mizrahi, P.J. Lemaire, D. Monroe, 1994 Conference on Optical Fiber Communication (Optical Society of America, Washington, 1994) 50.

48.   “Electrical characterization of an ultrahigh concentration boron delta-doping layer,” B.E. Weir, L.C. Feldman, D. Monroe, H.-J. Gossmann, R.L. Headrick, R.L.; T.R. Hart, Applied Physics Letters 65, 737 (1994).

49.     “Decay of ultraviolet-induced fiber Bragg gratings,” T. Erdogan, V. Mizrahi, P.J. Lemaire, D.  Monroe, Journal of Applied Physics 76, 73 (1994).

50.     “Defect control in relaxed, graded GeSi/Si,” E.A. Fitzgerald, Y.-H. Xie, D. Monroe, G.P. Watson, J.-M. Kuo, P.J. Silverman, Materials Science Forum 143-147, 471 (1994).

51.     “Electron-beam induced current determination of shallow junction depth,” E.A. Fitzgerald, H.-J. Gossmann, F.C. Unterwald, H.S. Luftman, D. Monroe, Journal of Vacuum Science & Technology B 12, 357 (1994)

52.     “Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition,” G.P. Watson, E.A. Fitzgerald, Y.-H. Xie, D. Monroe, Journal of Applied Physics 75, 263 (1994).

53.     “Transport in high-mobility Si1-xGex heterostructures grown by molecular-beam epitaxy,” D. Monroe, Y.-H. Xie, E.A. Fitzgerald, P.J. Silverman, Semiconductor Heterostructures for Photonic and Electronic Applications Edited by C.W. Tu, D.C. Houghton, and R.T. Tung (Materials Research Society, Pittsburgh, 1993) 449.

54.     “Quantum transport of buried single-crystalline CoSi2 layers in (111)Si and (100)Si substrates,” K. Radermacher, D. Monroe, A.E. White, K.T. Short, R. Jebasinski, Physical Review B48, 8002 (1993).

55.     “Comparison of mobility-limiting mechanisms in high-mobility Si1-xGex heterostructures,” D. Monroe, Y.-H. Xie, E.A. Fitzgerald, P.J. Silverman, G.P. Watson, Journal of Vacuum Science & Technology B 11, 1731 (1993).

56.     “Fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si,” Y.-H. Xie, E.A. Fitzgerald, D. Monroe, P.J. Silverman, G.P. Watson, Journal of Applied Physics 73, 8364 (1993).

57.     “Quantized Hall effects in high-electron-mobility Si/Ge structures,” D. Monroe, Y.-H. Xie, E.A. Fitzgerald, P.J. Silverman, P.J, Physical Review B 46, 7935 (1992).

58.     “Molecular beam epitaxial growth of very high mobility two-dimensional electron gases in Si/GeSi heterostructures,” Y.-H. Xie, E.A. Fitzgerald, Y.J. Mii, D. Monroe, F.A. Thiel, B.E. Weir, L.C. Feldman, Silicon Molecular Beam Epitaxy Edited by J.C. Bean, S.S. Iyer, and K.L. Wang, (Materials Research Society, Pittsburgh, 1991) 413.

59.     “Relaxed GexSi1-x structures for III-V integration with Si and high mobility two-dimensional electron gases in Si,” E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J. Silverman, J.-M. Kuo, A.R. Kortan, F.A. Thiel, B.E. Weir, Journal of Vacuum Science & Technology B 10, 1807 (1992).

60.     “Intersite Coulomb repulsion and intrasite attraction for DX centers in GaAs,” D. Monroe, Applied Physics Letters 59, 2293 (1991).

61.     “Capacitance measurements of the dynamics of screening in the electron glass,” D. Monroe, Hopping and Related Phenomena, Edited by H. Fritzsche, and M. Pollak (World Scientific,; Singapore, 1990) 3.

62.     “Electrical response of superconducting YBa2Cu3O7-d to light,” W.S. Brocklesby, D. Monroe, A.F.J. Levi, M. Hong, S.H. Liou, J. Kwo, C.E. Rice, Applied Physics Letters 54, 1175 (1989).

63.     “Tunneling characteristics of internal Josephson junctions in YBa2Cu 3O 7-d thin films,” W.S.  Brocklesby, D. Monroe, M. Hong, S.H. Liou, J. Kwo, G.J. Fisanick, P.M. Mankiewich, R.E. Howard, Physical Review B 38, 11805 (1988).

64.     “Scanning electron microscope identification of weak links in superconducting thin films,” D. Monroe, W.S. Brocklesby, R.C. Farrow, M. Hong, S.H. Liou, Applied Physics Letters 53, 1210 (1988).

65.     “Long-lived Coulomb gap in a compensated semiconductor-the electron glass,” D.  Monroe, A.C. Gossard, J.H. English, B. Golding, W.H. Haemmerle, M.A. Kastner, Physical Review Letters 59, 1148 (1987).

66.     “Band-edge conduction in amorphous semiconductors,” D. Monroe, in Disordered Semiconductors, Edited by M.A. Kastner, G.A. Thomas, and S.R. Ovshinsky (Plenum, New York, 1987) 705.

67.     “Effect of a defect level on multiple trapping: exact results,” D. Monroe, Solid State Communications 60, 435 (1986).

68.     “Exactly exponential band tail in a glassy semiconductor,” D. Monroe, M.A. Kastner, Physical Review B33, 8881 (1986). 

69.     “Hopping in exponential band tails,” D. Monroe, Physical Review Letters 54, 146 (1985).

70.     “Transient photo-induced absorption spectroscopy in a-As2Se3 in the presence of strong bias illumination,” D. Monroe, M.A. Kastner, Optical Effects in Amorphous Semiconductors AIP Conference Proceedings 120, 94 (1984). 

71.     “Thermally generated defects in liquid and glassy As2Se3,” M.A. Kastner, T. Thio, D. Monroe,  Journal of Non-Crystalline Solids 66, 309 (1984).

72.     “Spectral dependence of transient photocurrent quantum efficiency in amorphous arsenic triselenide,” D. Monroe, M.A. Kastner, Journal of Non-Crystalline Solids 59-60, 995 (1983).

73.     “Evidence for thermally generated defects in liquid and glassy As2Se3,” T. Thio, D. Monroe, M.A. Kastner, Physical Review Letters 52, 667 (1984).

74.     “Generalizations of multiple trapping,” D. Monroe, M.A. Kastner, Philosophical Magazine B 47, 605 (1983).

75.     “The relationship between transient and steady-state photoconductivity in amorphous semiconductors,” M.A. Kastner, D. Monroe, Solar Energy Materials 8, 41 (1982).

76.     “Density of states in the gap of a-As2Se3 by photocurrent transient spectroscopy,” D. Monroe, J. Orenstein, M.  Kastner, Journal de Physique Colloque 42 C-4 559 (1981).

77.     “Time-resolved measurements of photo-induced optical absorption and photocurrent in a-As2Se3,” J. Orenstein, M. Kastner, D. Monroe, Journal of Non-Crystalline Solids 35-36, 951 (1980).